new product (unit:mm) SST5001 consists of two high sensitivity npn silicon phototransistors mounted in a sidelooking package,it is compact and easy to mount. features compact low-cost dual channel sidelooking plastic package application photointerrupters optical detectors optical counters maximum ratings (ta= 25 ) itemsymbolratingunit c-e voltage v ceo 30v e-c voltage v eco 5v collector current i c 30ma collector power dissipation p c 100mw operating temp.topr. -25 +85 storage temp.tstg. -30 +100 soldering temp. * 1tsol.260 *1. lead soldering temperature(3mm from case for 5sec) electro- optical characteristics (ta= 25 ) itemssymbolmin. typ. max. unit collector dark current i ceo v ceo =10v - -500na light current i cel v ce =5v,e v =1000 lx * 2 0.5 -1.5ma light current proportion i cel 1 /i cel 2 v ce =5v,e v =1000 lx * 2 0.8 -1.2 c-e saturation voltagevce(sat ) i c =0.5ma,e v =2000 lx * 2 - -0.4v switching speeds rise timetr3.2 sec switching speeds fall timetf -4.8 - sec spectral sensitivity nm peak wavelength p -960 -nm half angle - 60-deg. *2. irradiance by cie standard light source a (2856k tungsten lamp) the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. condition 880 1,050 SST5001 photo transistor v cc =10v, i c = 5ma , r l =100 dec, 2013 dimensions 10 5 2.5 3 1 2 min 3.0 min 15 min 1.0 0.42 2.54 ? 2.5 10 10 10 10 emittercollector emitter (ptr a)(ptr b) 2.5 5 2.3 4.5 6.8 0.27 ptr aptr b 5 3- 0.5 3- 0.7 0.7 2.54 10 5
photo transistor the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. dec, 2013 ev=2000lx tr tf ev=1000lx ev=500lx ev=1500lx 2040 () 100 80 dark current vs. ambient temperature 60 power dissipation pc 0 040 20 50 100 () 100 80 power dissipation vs. ambient temperature (mw) ambient temperature ta 25 75 120 10 10 -1 (lx) illuminance ev 10 1 2 10 4 3 10 collector current ic 10 0 1 10 10 2 (ma) illuminance collector current vs. vce=5v ta=25 ( ) load resistance response time vs. ( s) 10 0 10 10 1 2 10 3 response time tr,tf vcc=5v ic=1ma ta=25 load resistance r 1010 1 2 10 4 3 10 l i fp vcc vout * response time measurement circuit i pce input output 90% 10% trtf 6 collector-emitter voltage vce 024(v) 810 0.8 1.2 1.6 0.4 0 (ma) ta=25 collector-emitter voltage collector current ic collector current vs. 60 relative intensity s 900 wavelength 600 500 0 4007008001100 (nm) 1000 20 40 80 100 (%) relative sensitivity vs. wavelengh ta=25 -40 +40 relative sensitivity(%) 100 50 +100 0 50 100 -100 50 +60 +80 -80 -60 angle(deg.) +20 0 -20 ta=25 (na) vce=5v ambient temperature ta 0 10 -1 10 dark current iceo 10 0 1 10 2 60 SST5001
photo transistor packing specification 1.fixed quantity (500pcs) of the products are packed into plastic bag 2.five bags of the products are put into #1 box 3. ten #1 boxes are put into #2 box and two #2 boxes are put into #3 box(max 50,000pcs) 4. packing slit is pasted on the out box the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. dec, 2013 SST5001 packing slit #2 box * 2#3 box #1 box * 10 SST5001 (500pcs) plastic bag * 5
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